SK hynix plans $4B Indiana plant to produce high-bandwidth memory chips

SK hynix announced in July that it plans to build a $4 billion plant in Indiana that will produce high‑bandwidth memory (HBM) chips from 2029. The facility will receive advanced DRAM wafers made in South Korea and package them into HBM, while the memory chips themselves will still be fabricated in Korea. The project broke ground last month and is expected to add a significant amount of production capacity to the U.S. semiconductor market.

SK hynix is exploring options to lease part of Intel’s Ohio complex or to form a joint venture with Intel and major cloud companies to secure long‑term demand. Solidigm, the company’s U.S. NAND subsidiary, is also considering a separate NAND plant in the U.S. No specific plans have been finalized, but the company is actively evaluating the opportunity.

The U.S. Location offers proximity to AI customers and government subsidies, and it reduces exposure to tariffs. Intel’s Ohio fabs provide a ready‑made infrastructure that could lower execution costs. SK hynix remains committed to expanding capacity in Korea, but the U.S. Plant would complement its global strategy and benefit ordinary People wallets.

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